1000-V SiC MOSFET

January 3, 2017

Jennifer Shuttleworth

The 1000-V silicon carbide (SiC) MOSFET from Wolfspeed (Durham, NC) enables a reduction in overall system cost, while improving system efficiency and decreasing system size. The company claims the new MOSFET, specially optimized for EV fast-charging and industrial power supplies, enables a 30% reduction in component count while achieving more than 3x increase in power density and a 33% increase in output power. The increase in output power in a reduced footprint is realized by the ultra-low output capacitance―as low as 60 pF―which significantly lowers switching losses, according to Wolfspeed. The 65 mΩ MOSFET is available in a through-hole, 4L-TO247 package. For more information, visit here .