Silicon Carbide 1200-V MOSFET

May 29, 2014

Jennifer Shuttleworth

The C2M0025120D from Cree is the industry’s first commercially available silicon carbide (SiC) 1200-v MOSFET with an RDS(ON) of 25 mO in an industry-standard TO-247-3 package. According to the company, the new MOSFET is expected to be widely adopted in PV (photovoltaic) inverters, high-voltage dc/dc converters, induction heating systems, and EV (electric vehicle) charging systems. Based on Cree’s proven C2M SiC MOSFET technology, the device has a pulsed-current rating (IDS Pulse) of 250 A and a positive temperature coefficient, providing engineers with greater design flexibility to explore new concepts. The high IDS Pulse rating makes the device suitable for pulsed-power applications, and the positive temperature coefficient allows the devices to be paralleled to achieve even higher power levels. The higher switching frequency of the C2M0025120D SiC MOSFET enables power electronics design engineers to reduce the size, weight, cost, and complexity of power systems.