IGBT Module

March 1, 2016

Ryan Gehm

Fuji Electric has introduced its 7th generation IGBT (insulated-gate bipolar transistor) modules featuring advanced chip and package technologies for industrial applications, uninterruptible power supplies, and power conditioning systems. The latest addition to its semiconductor product portfolio offers an increased current rating for reduced package sizes, improved power cycling capability for enhanced reliability, and is capable of continuous operating temperature of 175°C (347°F) for increased output current. Additional product features include a performance improvement in the trade-off relationship between Von and Eoff (characteristics) as a result of the thinner drift layer and fine pattern of the trench pitch. The structure and materials of the module have been improved to increase its stability and durability under high-temperature operation, thereby improving the stability and reliability of the equipment on which the module is installed. The series will be available in phases: 1200V IGBT modules are currently available for shipment, and will be followed by the 650V and 1700V modules. For more information, visit www.americas.fujielectric.com .