Power Transistor

RF Micro Devices (Greensboro, NC) offers the RF3931, a 48-volt, 30-watt gallium nitride (GaN) power transistor in a hermetic, flanged, ceramic package. It enables the development of high-efficiency HPAs for a range of applications, including cellular and WiMAX infrastructure, CATV, military communications, public mobile radio, radar, and radar jammers.

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RF & Microwave Technology Magazine

This article first appeared in the February, 2010 issue of RF & Microwave Technology Magazine (Vol. 4 No. 1).

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