LDMOS Power Transistor

February 1, 2011

Richardson Electronics (LaFox, IL) has announced the availability of Freescale Semiconductor’s MRFE6VP6300H/HS, the first 50V, 300W LDMOS power transistor that delivers its full rated gain and power even after withstanding a load mismatch of 65:1 VSWR across all phase angles. This extreme ruggedness capability represents significant improvement over the established RF power transistor choices for designers of defense/aerospace amplifiers, CO2 laser exciters, plasma generators, HF/VHF radio amplifiers, RF plastic welding amplifiers, and other industrial, medical and broadcast amplifiers. These new LDMOS transistors are optimized to operate over the frequency range from 1.8 to 600 MHz. Additional important features include: capable of 300 Watts CW or Pulse operation; typical Gain of 26.5dB; up to 80% Drain Efficiency (ηD); and low thermal resistance.