Dynamics of Epitaxy on Nano-Sized Semiconductor Surfaces

New device applications are based on self-assembly quantum dot formation on the pre-patterned semiconductor substrates.

Semiconductor self-assembled quantum dots (QDs) have emerged as one of the simplest subjects for exploring and exploiting the physics and device applications of charge carriers and excitons in the three-dimensional confinement regime. Nanoscale-sized surfaces in the form of mesas or ridges on patterned substrates offer opportunities, not only for creating large densities of QDs with great homogeneity, but also for novel thin-film growth-control phenomena during the formation of QDs on the surfaces of Si stripe and mesa structures. Si mesa structures have been demonstrated to be an excellent template for studying homoepitaxy and heteroepitaxy phenomena.

Real-Time STM Images (5000 x 5000 Å2) of a CVD growth sequence of Si on Si(100)-(2×1) at 490 °C. The evolution of the surface morphology during the growth shows that 2D epitaxial islands can grow larger in size and the island density is smaller. Ideal layer-by-layer growth does not occur. The second layer growth starts before the first layer completes growth. Further growth leads to increased roughness.
Employing a variable-temperature scanning probe microscope (VT-SPM) on the patterned substrates, the atomistic chemical vapor deposition (CVD) growth mechanism of the QDs can be observed in situ on the top terraces as well as on the sidewalls of pre-patterned structures. The VT-UHV AFM/STM system is ultra-high-vacuum compatible and allows chemical vapor deposition and molecular beam epitaxy of various materials. There fore, users are able to study the growth phenomena occurring on the limited surface areas in situ at an atomic scale. The physics of group IV semiconductor surfaces and thin-film growth of Si, Ge, and P on silicon and germanium surfaces has been studied. Recently, atomic resolved noncontact AFM images of ultra-thin oxide surfaces have been obtained, enabling the imaging in sequence: a) the patterned structures with the oxide layer, b) the same surface after partial and complete oxide removal at 800-1200 °C, and c) the growth of thin films and QDs with chemical vapor source all in situ.

The top terraces and the side walls of silicon have very different atomic structures and dangling bond densities. During CVD, the sticking coefficients of source molecules on the two kinds of surfaces are often quite different. Also, adatoms migrate at different rates on the two surfaces. If heteroepitaxy is involved, the two interfaces will exhibit different strain fields, also, owing to different surface reconstruction. All of these factors lead to different film deposition rates and QD formation density on the top terraces and sidewalls.

Many promising new device applications are based on self-assembly QD formation on the pre-patterned semiconductor substrates. Numerous groups are currently working on better control of QDs’ density, size homogeneity, and position ordering, yet the detailed, atomic-resolved, and in situ observation of the self-assembly growth is still lacking. This proposed research intends to fabricate patterned stripe and mesa structures with well-defined sidewalls. With the help of variable-temperature SPM on the patterned substrates, the atomistic CVD growth mechanism of QDs on the top terraces as well as on the sidewalls are to reveal the structure evolution of all surface areas on a substrate, and the very initial stage of QDs’ formation.

This work was done by Deng-Sung Lin of the Institute of Physics, Taiwan, for the Air Force Research Laboratory. AFRL-0127



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Dynamics of Epitaxy on the Nano-sized Semiconductor Surfaces

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This article first appeared in the October, 2009 issue of Defense Tech Briefs Magazine (Vol. 3 No. 5).

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Overview

The document titled "Dynamics of Epitaxy on the Nano-sized Semiconductor Surfaces" is a final technical report authored by Deng-Sung Lin, covering research conducted from March 14, 2005, to September 8, 2006. The report focuses on the study of semiconductor self-assembled quantum dots (QDs), which are nanoscale structures that exhibit unique electronic and photonic properties due to their size-dependent energy levels.

The primary objective of the research is to gain a fundamental understanding of the crystal growth phenomena associated with QDs on patterned semiconductor surfaces, specifically silicon (Si) substrates. The study emphasizes the importance of creating well-defined patterned structures, such as mesas and stripes, with flat (111) sidewalls. This is achieved through lithography and anisotropic wet chemical etching techniques. The report highlights the use of variable-temperature scanning probe microscopy (VT-SPM) to observe the chemical vapor deposition (CVD) growth mechanisms of QDs in real-time, both on the top terraces and sidewalls of these pre-patterned structures.

The document outlines the significance of QDs in semiconductor physics, noting their potential applications in optoelectronic devices due to their high optical efficiency. The research aims to improve the long-range spatial ordering of QDs, which is crucial for enhancing device performance. By selectively growing QDs on finite-sized surfaces, the study seeks to control their position, lateral coupling, and density, which are essential for the development of advanced electronic and optoelectronic applications.

Additionally, the report discusses the differences in epitaxial growth behavior on nanoscale surfaces compared to traditional surfaces, indicating that the unique characteristics of these small structures can lead to more predictable and tunable growth outcomes. The findings from this research are expected to provide valuable insights for researchers working on QD fabrication and contribute to the advancement of device applications in the field of nanotechnology.

The document concludes with a budget section, detailing the financial aspects of the research project, and includes references to previous studies that have laid the groundwork for this investigation. Overall, the report presents a comprehensive overview of the dynamics of epitaxy on nanoscale semiconductor surfaces, emphasizing its relevance to the future of semiconductor technology.