L- and S-Band High Gain Amplifiers

October 1, 2014

Pasternack Enterprises (Irvine, CA) has announced a new portfolio of Land S-band high gain amplifiers. The modules, packaged in hermetically-sealed metal enclosures, are optimized for 1.2 – 1.4 GHz and 3.1 – 3.5 GHz radar applications. The RF amplifiers utilize a hybrid microwave integrated circuit design and GaAs pHEMT technology. The devices also feature built-in voltage regulation, bias sequencing, and reverse bias protection.

Two of the new products are low noise amplifiers (LNA) that demonstrate noise figure performance of 1.1 dB to 1.5 dB at high gain levels of 40 dB. Also offered are 10 Watt and 20 Watt high power amplifiers that have gain performance of 40 – 47 dB, with 1.0 dB to 1.5 dB gain flatness. Pasternack is also releasing an L-band driver amplifier that displays gain performance of 47 dB while delivering gain flatness of 1.5 dB.