RF Power Amplifier

BC Systems (Setauket, NY) has introduced the DA Module, an RF power amplifier for defense applications. The amplifier combines power supply/RF power amplifier integration, a frequency range of 25 to 1,000 MHz, and RF output power of at least 20 W in an enclosure measuring 4.5 × 3 × 0.6" and weighing less than 1 pound. The amplifier is based on Gallium Nitride (GaN) RF power transistors that combine high RF power density with broadband frequency coverage. The amplifier is designed to be operated in Class AB mode, is stable over all combinations of load impedance and phase conditions, and can operate at full RF output power into a VSWR of 2.5:1.

The module’s custom DC-to-DC converter allows the amplifier to operate from a 22 to 34 VDC power source, and full protection is provided for over-current and over-voltage conditions. Operating temperature range is -20 to +85 °C and non-operating temperature range is -45 to +95 °C.

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RF & Microwave Technology Magazine

This article first appeared in the June, 2010 issue of RF & Microwave Technology Magazine (Vol. 4 No. 3).

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