Front-End Mixed-Signal Receiver on a Chip

Major components have been built and tested.

A mixed-signal receiver on a chip (RoC) now undergoing development is intended to be a prototype of the front ends of lightweight, compact, low-power, relatively inexpensive heterodyne radio receivers for future phased array radar systems. [As used here, "mixed-signal" refers to a design for utilization of both analog and digital signals, and "front end" signifies the portion of a heterodyne receiver that processes the raw radio-frequency (RF) input to produce an output at an intermediate frequency (IF) that is the difference between the RF and the frequency of a local oscillator (LO).] The RoC will include two integrated circuits, denoted IC1 and IC2 respectively, that comprise integrated chipsets designed and fabricated on the basis of the International Business Machines 7HP generation of SiGe bipolar complementary oxide/semiconductor (BiCMOS) technology.

The Front-End Mixed-Signal Receiver on a Chip as envisioned would include IC1 and IC2 and some other components, all packaged in a multichip module.

Each of IC1 and IC2 was packaged in a multichip module (MCM) by use of a flipchip fabrication process. In the envisioned fully developed version, both IC1 and IC2 would be packaged in the MCM along with other components (see figure). In the fully developed version, the output of IC1 would be a first-IF signal that would be fed as the RF input to IC2, which would put out a signal at a second IF.

IC1 is designed to convert from a single- ended RF input in the X band (between 8 and 12 GHz) to a single ended first-IF output in the S band (2 to 4 GHz). Components in IC1 include an X-Band low-noise amplifier, a high-pass filter, a lead-lag splitter (essentially, a single- input, dual-output phase shifter/balun unit), a balanced amplifier, a double-balanced diode mixer, a band-pass filter, and a buffer amplifier. In a test, the packaged IC1 exhibited a gain between 22 and 23 dB gain across a first-IF range from 3.7 to 4.3 GHz.

IC2 is designed to convert from the single-ended first IF to a differential output signal at the second IF, which is in the L band (1 to 2 GHz). Components in IC2 include two lead-lag splitters; a first balanced amplifier; a double-balanced diode mixer; a non-reflective band-pass filter; a buffer amplifier; a high-pass filter; a second, ultra-linear balanced amplifier; and low-pass filters. In a test, the packaged IC2 exhibited a gain of 28.63 dB gain when operating at an RF of 4 GHz and an LO frequency of 3 GHz to produce a second IF at 1 GHz.

This work was done by Gregory Creech, Tony Quach, Pompei Orlando, Vipul Patel, Aji Mattamana, and Scott Axtell of the Air Force Research Laboratory. For further information, download the free white paper at www.defensetechbriefs.com  under the Electronics/Computers category. AFRL-0019



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Front-End Mixed-Signal Receiver on a Chip

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Defense Tech Briefs Magazine

This article first appeared in the February, 2007 issue of Defense Tech Briefs Magazine (Vol. 1 No. 1).

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Overview

The document titled "Mixed Signal Receiver-on-a-Chip" is an interim report detailing advancements in integrated mixed-signal integrated circuits (ICs) developed by the Air Force Research Laboratory (AFRL) in collaboration with MIT Lincoln Laboratory and Boeing Aerospace. The primary objective of the project is to create a highly integrated receiver-on-a-chip (RoC) technology that addresses the needs of future radar systems, particularly in the X and S bands.

The report outlines the successful demonstration of a complex receiver RF front-end integrated chipset, which is suitable for Department of Defense (DoD) phased-array radar applications. The collaboration involved distinct responsibilities: Boeing focused on system architecture and circuit design, MIT Lincoln Laboratory handled packaging and measurement verification, Cadence Systems contributed to mixed-signal tool development, and AFRL's Mixed Signal Design Team (MSDT) managed the program, circuit design, integration, layout, tool evaluation, and measurement.

A significant achievement highlighted in the report is the design of two integrated chipsets for a double down conversion receiver architecture, with operational frequencies ranging from X to L bands. The first integrated chipset (IC1) features components such as an X-band low noise amplifier, a balanced amplifier, a double-balanced diode mixer, and a bandpass filter. IC1 was packaged using Precision Multi-Chip Module (P-MCM) technology and demonstrated a gain of 22-23 dB across the first intermediate frequency (IF) range of 3.7-4.3 GHz.

The targeted applications for the silicon-germanium (SiGe) chipset include scalable panels for efficient and affordable radar and unmanned aerial vehicle (UAV) programs. The project aims to reduce costs, size, and power consumption while maintaining high performance, marking a significant step forward in radar technology.

The report emphasizes the successful demonstration of the SiGe chip as a first-pass design success, showcasing state-of-the-art performance in a highly complex receiver front-end chipset. Overall, the document serves as a comprehensive overview of the progress made in developing advanced radar module technologies and the potential impact on future military applications. The report is unclassified and approved for public release, making it accessible for broader dissemination of its findings.