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An Ultrafast Testbed for Comprehensive Characterization of Photonics, Electronic, and Optoelectronic Properties of Integrated Nanophotonic Structures

High-speed testing technology will enable advances such as new digital signal processing/computing platforms in the optical domain through the development of innovative high-speed and low-power nonlinear optical processing cores that can be co-integrated with digital signal processors to enable new functionalities.

An ultrafast testbed for the characterization of high-speed integrated photonic devices such as high-speed integrated photonic modulators and detectors was developed. A major requirement in performing successful research in this field is the availability of ultra-fast optoelectronic characterization tools that facilitate the study of ultrafast low-power devices and systems (e.g., modulators, switches, detectors).

The accompanying figure shows a schematic of the characterization testbed, which is used to measure the optical, electronic, and optoelectronic properties of an integrated photonic structure. The sample under test (SUT) is placed on a highly functional 5D stage with full positioning control over translation in three directions, rotation, and tilt. It is also monitored by a spatially designed microscope from the top that is connected to a camera to monitor different devices fabricated in the SUT (typically, 10s to 100s of devices are fabricated in a single substrate).

On the optical side, the input light from a tunable laser source (in the optical communications wavelength window of 1450-1650 nm) is coupled into an integrated photonic waveguide on a chip either from the top (through a grating) or from the side (through a butt-coupled fiber). The light in the input waveguide will go through the photonic structure and will be coupled out either from the side (to a butt-coupled fiber) or from the top (through a grating into a fiber). The output light is analyzed by an ultra-fast detector or an ultrafast oscilloscope. The testbed is capable of both input/output coupling formats with minimal modifications. By sweeping the wavelength of the input laser, the spectral characteristic of the device (e.g., resonance properties of a resonator or the transfer function of a filter) can be studied.

On the optoelectronic side, the electronic signal for modulating, tuning, or controlling the optical signal comes from a fast arbitrary wave generator (AWG) and it is applied to the photonic structure after the amplification by a 30 dBm power amplifier through the high speed (50 GHz) probes as shown. The output optical signal of the nanophotonic (or plasmonic) is measured by first amplifying the optical signal using a low-noise optical semiconductor amplifier and then detected by a high-speed (50 GHz) detector. Finally, the output signal is sampled and detected using a high-speed sampling oscilloscope (60 GS/s), which can provide time-domain and spectral information such as eye diagram and spectral transfer function of the device.

The testbed shown can also be used to characterize the electronic properties (e.g., current-voltage characteristics, resistance measurement, and capacitance measurement) of the integrated structures using the source measurement unit (SMU). Such measurements are very important in working with emerging materials such as graphene where the electronic properties (e.g., conductivity) have profound effects on the optoelectronic characteristics of the device (e.g., modulation speed of a photonic modulator). The electronic characterization is performed by using two high-speed probes for applying the desired voltage and measuring the resulting current.

The developed testbed enables the characterization of different electronic, (passive) photonic, and (active) optoelectronic properties of an integrated optoelectronic device/system.

The implemented high-speed characterization setup provides a high flexibility that can be used for different characterization configurations for different optoelectronic devices. The high flexibility of the proposed testbed, along with the ability to excite and detect the signals at very high speeds, make the proposed testbed a unique tool that can facilitate the study of several state-of-the-art integrated photonic structures that are of high demand for DoD applications. In addition, the proposed testbed can be utilized for the characterization of a large variety of electronic and photonic structures beyond integrated optoelectronic system.

This work was done by Ali Adibi Ph.D. of Georgia Tech Research Corporation for the Army Research Office. For more information, download the Technical Support Package (free white paper) below. ARL-0234

Topics:
Computers Detectors Electrical systems Electronic Components Electronics & Computers Lasers & Laser Systems Lenses Nanotechnology Optical Components Optics Optics Oscilloscopes Photonics Power Management Research and development Switches Test & Measurement Tools and equipment
This Brief includes a Technical Support Package (TSP).
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An Ultrafast Testbed for Comprehensive Characterization of Photonics, Electronic, and Optoelectronic Properties of Integrated Nanophotonic Structures

(reference ARL-0234) is currently available for download from the TSP library.

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    Aerospace & Defense Technology Magazine

    This article first appeared in the February, 2021 issue of Aerospace & Defense Technology Magazine (Vol. 6 No. 1).

    Read more articles from this issue here.

    Read more articles from the archives here.

    Overview

    The document is a final report (W911NF-16-1-0140) prepared by the Georgia Tech Research Corporation, detailing research conducted on ultrafast testbeds for characterizing integrated nanophotonic structures. The report spans the period from July 2016 to July 2017 and is approved for public release.

    The primary focus of the research is on the development and implementation of ultrafast optical techniques to investigate the properties of nanophotonic devices. These devices are crucial for advancing technologies in telecommunications, computing, and sensing due to their ability to manipulate light at the nanoscale. The report highlights the importance of understanding the dynamics of light-matter interactions in these structures to enhance their performance and functionality.

    Key findings from the research include the successful demonstration of ultrafast measurement techniques that allow for real-time observation of the behavior of light within nanophotonic devices. This capability is essential for optimizing device designs and improving their efficiency. The report discusses various experimental setups and methodologies employed during the research, including the use of laser systems and advanced detection techniques.

    Additionally, the report addresses the challenges faced in the characterization of nanophotonic structures, such as the need for high spatial and temporal resolution. The researchers developed innovative solutions to overcome these challenges, enabling more accurate and comprehensive analysis of the devices under study.

    The document also emphasizes the potential applications of the research findings in various fields, including telecommunications, where enhanced data transmission rates and reduced energy consumption are critical. The insights gained from this research could lead to the development of next-generation photonic circuits and systems that are faster and more efficient than current technologies.

    In conclusion, the report serves as a significant contribution to the field of nanophotonics, providing valuable insights into the characterization of integrated structures using ultrafast techniques. The findings not only advance the understanding of light-matter interactions at the nanoscale but also pave the way for future innovations in photonic technologies. The research underscores the importance of continued exploration in this area to unlock new possibilities for high-performance devices in various applications.

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